Disponibilidad:
En existencia
Tu precio:
US$6,50
Descripción
Información básica
Description:
Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanch and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Para más detalles ver hoja de datos: W15NB50 Datasheet.pdf (147441)
Using the latest high voltage MESH OVERLAY]
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
| No. de artículos en existencia: | 2 |
| Producto nº: | AD35405 |